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Modification of the organic/La0.7Sr0.3MnO3 interface by in situ gas treatment

Identifieur interne : 001355 ( Chine/Analysis ); précédent : 001354; suivant : 001356

Modification of the organic/La0.7Sr0.3MnO3 interface by in situ gas treatment

Auteurs : RBID : Pascal:07-0522774

Descripteurs français

English descriptors

Abstract

La0.7Sr0.3MnO3 (LSMO) can act as a spin injection electrode in organic spin-valves and organic light-emitting devices. For the latter application, good control of the electronic structure of the organic/LSMO interface is a key issue to ensure sufficient current injection in the device. By exposing cleaned LSMO surfaces to activated oxygen and hydrogen, the work function of the samples can reach 5.15 and 4.3 eV, respectively, as shown by in situ photoemission measurements. The initial stage of formation of the organic/LSMO interface upon deposition of N,N'-bis-(1-naphyl)-N,N'-diphenyl-l,l'-biphenyl-4,4'-diamine (NPB) onto the oxygen-treated LSMO surface is examined. We find that the NPB molecules evenly cover the LSMO surface and that the interface barrier height is 0.8 eV, which is comparable to that at the NPB/indium tin oxide (ITO) interface with the ITO surface pretreated in situ by oxygen plasma.

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Pascal:07-0522774

Le document en format XML

<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">Modification of the organic/La
<sub>0.7</sub>
Sr
<sub>0.3</sub>
MnO
<sub>3</sub>
interface by in situ gas treatment</title>
<author>
<name sortKey="Wang, X Z" uniqKey="Wang X">X. Z. Wang</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Surface Physics Laboratory, Fudan University</s1>
<s2>Shanghai 200433</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200433</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Ding, X M" uniqKey="Ding X">X. M. Ding</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Surface Physics Laboratory, Fudan University</s1>
<s2>Shanghai 200433</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200433</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Li, Z S" uniqKey="Li Z">Z. S. Li</name>
<affiliation wicri:level="1">
<inist:fA14 i1="02">
<s1>Institute for Storage Ring Facilities, University of Aarhus</s1>
<s2>8000 Aarhus</s2>
<s3>DNK</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Danemark</country>
<wicri:noRegion>8000 Aarhus</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Zhan, Y Q" uniqKey="Zhan Y">Y. Q. Zhan</name>
<affiliation wicri:level="1">
<inist:fA14 i1="03">
<s1>ISMN-Bo CNR, via Gobetti 101</s1>
<s2>40129 Bologna</s2>
<s3>ITA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>40129 Bologna</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Bergenti, I" uniqKey="Bergenti I">I. Bergenti</name>
<affiliation wicri:level="1">
<inist:fA14 i1="03">
<s1>ISMN-Bo CNR, via Gobetti 101</s1>
<s2>40129 Bologna</s2>
<s3>ITA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>40129 Bologna</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Dediu, V A" uniqKey="Dediu V">V. A. Dediu</name>
<affiliation wicri:level="1">
<inist:fA14 i1="03">
<s1>ISMN-Bo CNR, via Gobetti 101</s1>
<s2>40129 Bologna</s2>
<s3>ITA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>40129 Bologna</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Taliani, C" uniqKey="Taliani C">C. Taliani</name>
<affiliation wicri:level="1">
<inist:fA14 i1="03">
<s1>ISMN-Bo CNR, via Gobetti 101</s1>
<s2>40129 Bologna</s2>
<s3>ITA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>40129 Bologna</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Xie, Z T" uniqKey="Xie Z">Z. T. Xie</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Surface Physics Laboratory, Fudan University</s1>
<s2>Shanghai 200433</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200433</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Ding, B F" uniqKey="Ding B">B. F. Ding</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Surface Physics Laboratory, Fudan University</s1>
<s2>Shanghai 200433</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200433</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Hou, X Y" uniqKey="Hou X">X. Y. Hou</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Surface Physics Laboratory, Fudan University</s1>
<s2>Shanghai 200433</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200433</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Zhang, W H" uniqKey="Zhang W">W. H. Zhang</name>
<affiliation wicri:level="1">
<inist:fA14 i1="04">
<s1>National Synchrotron Radiation Laboratory, University of Science and Technology of China</s1>
<s2>Hefei 230029</s2>
<s3>CHN</s3>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Hefei 230029</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Xu, F Q" uniqKey="Xu F">F. Q. Xu</name>
<affiliation wicri:level="1">
<inist:fA14 i1="04">
<s1>National Synchrotron Radiation Laboratory, University of Science and Technology of China</s1>
<s2>Hefei 230029</s2>
<s3>CHN</s3>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Hefei 230029</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="inist">07-0522774</idno>
<date when="2007">2007</date>
<idno type="stanalyst">PASCAL 07-0522774 INIST</idno>
<idno type="RBID">Pascal:07-0522774</idno>
<idno type="wicri:Area/Main/Corpus">007124</idno>
<idno type="wicri:Area/Main/Repository">007524</idno>
<idno type="wicri:Area/Chine/Extraction">001355</idno>
</publicationStmt>
<seriesStmt>
<idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Barrier height</term>
<term>Electronic structure</term>
<term>Hydrogen</term>
<term>In situ</term>
<term>Lanthanum Manganites</term>
<term>Oxygen</term>
<term>Photoemission</term>
<term>Quaternary compounds</term>
<term>Rare earth compounds</term>
<term>Spin injection</term>
<term>Strontium Manganites</term>
<term>Surface treatments</term>
<term>Synchrotron radiation</term>
<term>Work functions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Lanthane Manganite</term>
<term>Composé quaternaire</term>
<term>Lanthanide composé</term>
<term>In situ</term>
<term>Injection spin</term>
<term>Structure électronique</term>
<term>Oxygène</term>
<term>Hydrogène</term>
<term>Travail sortie</term>
<term>Photoémission</term>
<term>Hauteur barrière</term>
<term>Rayonnement synchrotron</term>
<term>Traitement surface</term>
<term>La O Sr</term>
<term>La0,7Sr0,3MnO3</term>
<term>Strontium Manganite</term>
<term>7330</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr">
<term>Oxygène</term>
<term>Hydrogène</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">La
<sub>0.7</sub>
Sr
<sub>0.3</sub>
MnO
<sub>3</sub>
(LSMO) can act as a spin injection electrode in organic spin-valves and organic light-emitting devices. For the latter application, good control of the electronic structure of the organic/LSMO interface is a key issue to ensure sufficient current injection in the device. By exposing cleaned LSMO surfaces to activated oxygen and hydrogen, the work function of the samples can reach 5.15 and 4.3 eV, respectively, as shown by in situ photoemission measurements. The initial stage of formation of the organic/LSMO interface upon deposition of N,N'-bis-(1-naphyl)-N,N'-diphenyl-l,l'-biphenyl-4,4'-diamine (NPB) onto the oxygen-treated LSMO surface is examined. We find that the NPB molecules evenly cover the LSMO surface and that the interface barrier height is 0.8 eV, which is comparable to that at the NPB/indium tin oxide (ITO) interface with the ITO surface pretreated in situ by oxygen plasma.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>0169-4332</s0>
</fA01>
<fA03 i2="1">
<s0>Appl. surf. sci.</s0>
</fA03>
<fA05>
<s2>253</s2>
</fA05>
<fA06>
<s2>23</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1>Modification of the organic/La
<sub>0.7</sub>
Sr
<sub>0.3</sub>
MnO
<sub>3</sub>
interface by in situ gas treatment</s1>
</fA08>
<fA11 i1="01" i2="1">
<s1>WANG (X. Z.)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>DING (X. M.)</s1>
</fA11>
<fA11 i1="03" i2="1">
<s1>LI (Z. S.)</s1>
</fA11>
<fA11 i1="04" i2="1">
<s1>ZHAN (Y. Q.)</s1>
</fA11>
<fA11 i1="05" i2="1">
<s1>BERGENTI (I.)</s1>
</fA11>
<fA11 i1="06" i2="1">
<s1>DEDIU (V. A.)</s1>
</fA11>
<fA11 i1="07" i2="1">
<s1>TALIANI (C.)</s1>
</fA11>
<fA11 i1="08" i2="1">
<s1>XIE (Z. T.)</s1>
</fA11>
<fA11 i1="09" i2="1">
<s1>DING (B. F.)</s1>
</fA11>
<fA11 i1="10" i2="1">
<s1>HOU (X. Y.)</s1>
</fA11>
<fA11 i1="11" i2="1">
<s1>ZHANG (W. H.)</s1>
</fA11>
<fA11 i1="12" i2="1">
<s1>XU (F. Q.)</s1>
</fA11>
<fA14 i1="01">
<s1>Surface Physics Laboratory, Fudan University</s1>
<s2>Shanghai 200433</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA14 i1="02">
<s1>Institute for Storage Ring Facilities, University of Aarhus</s1>
<s2>8000 Aarhus</s2>
<s3>DNK</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03">
<s1>ISMN-Bo CNR, via Gobetti 101</s1>
<s2>40129 Bologna</s2>
<s3>ITA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="04">
<s1>National Synchrotron Radiation Laboratory, University of Science and Technology of China</s1>
<s2>Hefei 230029</s2>
<s3>CHN</s3>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</fA14>
<fA20>
<s1>9081-9084</s1>
</fA20>
<fA21>
<s1>2007</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>16002</s2>
<s5>354000149745300070</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>11 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>07-0522774</s0>
</fA47>
<fA60>
<s1>P</s1>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i1="01" i2="1">
<s0>Applied surface science</s0>
</fA64>
<fA66 i1="01">
<s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>La
<sub>0.7</sub>
Sr
<sub>0.3</sub>
MnO
<sub>3</sub>
(LSMO) can act as a spin injection electrode in organic spin-valves and organic light-emitting devices. For the latter application, good control of the electronic structure of the organic/LSMO interface is a key issue to ensure sufficient current injection in the device. By exposing cleaned LSMO surfaces to activated oxygen and hydrogen, the work function of the samples can reach 5.15 and 4.3 eV, respectively, as shown by in situ photoemission measurements. The initial stage of formation of the organic/LSMO interface upon deposition of N,N'-bis-(1-naphyl)-N,N'-diphenyl-l,l'-biphenyl-4,4'-diamine (NPB) onto the oxygen-treated LSMO surface is examined. We find that the NPB molecules evenly cover the LSMO surface and that the interface barrier height is 0.8 eV, which is comparable to that at the NPB/indium tin oxide (ITO) interface with the ITO surface pretreated in situ by oxygen plasma.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B70C30</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE">
<s0>Lanthane Manganite</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG">
<s0>Lanthanum Manganites</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA">
<s0>Manganito</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Composé quaternaire</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Quaternary compounds</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE">
<s0>Lanthanide composé</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG">
<s0>Rare earth compounds</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE">
<s0>In situ</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG">
<s0>In situ</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA">
<s0>In situ</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Injection spin</s0>
<s5>07</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Spin injection</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Structure électronique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Electronic structure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE">
<s0>Oxygène</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG">
<s0>Oxygen</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Hydrogène</s0>
<s2>NC</s2>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Hydrogen</s0>
<s2>NC</s2>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Travail sortie</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Work functions</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE">
<s0>Photoémission</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG">
<s0>Photoemission</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE">
<s0>Hauteur barrière</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG">
<s0>Barrier height</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>Rayonnement synchrotron</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG">
<s0>Synchrotron radiation</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>Traitement surface</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG">
<s0>Surface treatments</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE">
<s0>La O Sr</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE">
<s0>La0,7Sr0,3MnO3</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE">
<s0>Strontium Manganite</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>41</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG">
<s0>Strontium Manganites</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>41</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA">
<s0>Manganito</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>41</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE">
<s0>7330</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>45</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE">
<s0>Métal transition composé</s0>
<s5>01</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG">
<s0>Transition element compounds</s0>
<s5>01</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE">
<s0>Composé minéral</s0>
<s5>03</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG">
<s0>Inorganic compounds</s0>
<s5>03</s5>
</fC07>
<fN21>
<s1>344</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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